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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU323Z/D Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: * Integrated High-Voltage Active Clamp * Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the - 40C to +125C Temperature Range * Clamping Energy Capability 100% Tested in a Live Ignition Circuit * High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range * Design Guarantees Operation in SOA at All Times * Offered in Plastic SOT-93/TO-218 Type or TO-220 Packages MAXIMUM RATINGS BU323Z AUTOPROTECTED DARLINGTON 10 AMPERES 360 - 450 VOLTS CLAMP 150 WATTS 360 V CLAMP IIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I IIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VEBO IC ICM IB IBM PD Value 350 6.0 10 20 Unit Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage Collector-Emitter Voltage Collector Current -- Continuous -- Peak Base Current -- Continuous -- Peak Total Power Dissipation Derate above 25_C 3.0 6.0 (TC = 25_C) 150 1.0 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 175 CASE 340D-02 SOT-93/TO-218 TYPE _C THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max 1.0 Unit Thermal Resistance, Junction to Case _C/W _C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 260 This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 8 (c) Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BU323Z (1) Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) CLAMPING ENERGY (see notes) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Cross-over Time Storage Time Fall Time Repetitive Non-Destructive Energy Dissipated at turn-off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 ) (see Figures 2 and 4) Input Capacitance (VEB = 6.0 V) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (IC = 5.0 Adc, VCE = 4.6 Vdc) Diode Forward Voltage Drop (IF = 10 Adc) Base-Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc) Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc) Emitter-Base Leakage Current (VEB = 6.0 Vdc, IC = 0) Collector-Emitter Cutoff Current (VCE = 200 V, IB = 0) Collector-Emitter Clamping Voltage (IC = 7.0 A) (TC = - 40C to +125C) 2 (IC = 10 Adc, IB = 0.25 Adc) (IC = 8.0 Adc, IB = 0.1 Adc) Characteristic (IC = 6.5 A, IB1 = 45 mA, VBE(off) = 0, RBE(off) = 0, () () VCC = 14 V, VZ = 300 V) V (TC = - 40C to +125C) (TC = - 40C to +125C) (TC = 125C) (TC = 125C) WCLAMP VCLAMP VCE(sat) VBE(sat) VBE(on)IIII 1.1 1.3 Symbol Motorola Bipolar Power Transistor Device Data ICEO IEBO Cob hFE Cib VF tsi fT tfi tc Min 200 150 500 350 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ 625 1.7 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3400 Max 550 200 100 450 2.0 2.5 2.1 2.3 1.6 1.8 1.8 2.1 1.7 2.2 2.5 30 50 -- -- -- mAdc Adc MHz Unit Vdc Vdc Vdc Vdc Vdc mJ pF pF s s ns -- BU323Z IC INOM = 6.5 A Output transistor turns on: IC = 40 mA High Voltage Circuit turns on: IC = 20 mA Avalanche diode turns on: IC = 100 A VCE VCLAMP NOMINAL = 400 V By design, the BU323Z has a built-in avalanche diode and a special high voltage driving circuit. During an auto-protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in "FBSOA." Because of the built-in zener and associated network, the I C = f(V CE ) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. 250 V Icer Leakage Current 300 V 340 V Figure 1. IC = f(VCE) Curve Shape MERCURY CONTACTS WETTED RELAY L INDUCTANCE (8 mH) VCE MONITOR (VGATE) IC CURRENT SOURCE The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 , Vgate = 280 V, L = 8.0 mH RBE = 100 IB CURRENT SOURCE VBEoff IB2 SOURCE IC MONITOR 0.1 NON INDUCTIVE Figure 2. Basic Energy Test Circuit 10 IC, COLLECTOR CURRENT (AMPS) TC = 25C 10 ms 250 ms 0.1 1 ms 300 s 1 0.01 THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 100 340 V VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0.001 10 Figure 3. Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 BU323Z IC ICPEAK IC HIGH The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a. VCE IC LOW Figure 4a. IC ICPEAK VGATE MIN IC HIGH IC LOW VCE Figure 4b. IC ICPEAK VGATE MIN IC HIGH The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. IC LOW VCE Figure 4c. IC ICPEAK VGATE MIN IC HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d. IC LOW VCE Figure 4d. VGATE MIN Figure 4. Energy Test Criteria for BU323Z 4 Motorola Bipolar Power Transistor Device Data BU323Z 10000 10000 TYPICAL hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 125C 1000 -40C 100 25C 1000 TYP - 6 TYP + 6 100 VCE = 1.5 V 10 100 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 10000 10 100 VCE = 5 V, TJ = 25C 1000 10000 IC, COLLECTOR CURRENT (MILLIAMPS) 100000 Figure 5. DC Current Gain Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 IB, BASE CURRENT (AMPS) 100 7A 5A 8A 10 A IC = 3 A TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 25C IC/IB = 150 TJ = 125C 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Collector Saturation Region Figure 8. Collector-Emitter Saturation Voltage VBE(on), BASE-EMITTER VOLTAGE (VOLTS) 2.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC/IB = 150 1.8 1.6 1.4 1.2 1.0 0.8 0.1 125C TJ = 25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 125C TJ = 25C VCE = 2 VOLTS 1 IC, COLLECTOR CURRENT (AMPS) 10 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 9. Base-Emitter Saturation Voltage Figure 10. Base-Emitter "ON" Voltages Motorola Bipolar Power Transistor Device Data 5 BU323Z PACKAGE DIMENSIONS C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H DIM A B C D E G H J K L Q S U V STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D-02 SOT-93/TO-218 TYPE ISSUE B Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device BU323Z/D Data *BU323Z/D* |
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